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Gain measurements in 1.3 µm InGaAsP-InP double heterostructure lasers

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2 Author(s)
N. Dutta ; AT&T Bell Laboratories, Murray Hill, NJ, USA ; R. Nelson

The net gain per unit length ( G ) versus current ( I ) is measured at various temperatures for 1.3 μm InGaAsP-InP double heterostructure lasers. G is found to vary linearly with the current I at a given temperature. The gain bandwidth is found to decrease with decreasing temperature. The lasing photon energy decreases at 0.325 meV/K with increasing temperature. Also, the slope dG/dI at the lasing photon energies decreases with increasing temperature. This decrease is more rapid for T > \sim210 K. This faster decrease is consistent with the observed higher temperature dependence of threshold (low T0at high temperatures) of 1.3 μm InGaAsP lasers. A carrier loss mechanism, due to Auger recombination, also predicts that dG/dI should decrease much faster with increasing temperature at high temperatures. We also find that the slope dG/dI decreases slowly with increasing temperature for a GaAs laser, which is consistent with the observed temperature dependence of threshold of these lasers.

Published in:

IEEE Journal of Quantum Electronics  (Volume:18 ,  Issue: 1 )