By Topic

Transverse mode controlled in inGaAsP inP lasers at 1.5 µm range with buffer-layer loaded piano-convex waveguide (BL-PCW) structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sakai, K. ; KDD Research adn Development Laboratories, Tokyo, Japan ; Tanaka, F. ; Noda, Y. ; Matsushima, Y.
more authors

A modified plano-convex waveguide structure is studied analytically and successfully applied to InGaAsP/InP lasers in the 1.5- 1.6 \mu m wavelength region to realize stable transverse mode operation. The structure of these lasers is characterized by a standard buffer layer between an active layer and an upper cladding layer and a waveguide layer of varying thickness between the active layer and the substrate. A theoretical analysis of this structure showed that, for a given channel depth, increases in buffer-layer thickness give rise to larger maximum channel widths of the substrate for fundamental transverse mode operation. It was also shown that the optical confinement factor in the active layer decreases little as the buffer-layer thickness is increased from 0.1 to 0.3 μm. Buffer-layer loaded plano-convex waveguide lasers in the 1.5 μm range were prepared by liquid phase epitaxy and fundamental transverse mode operation up until I = 2I_{th} was obtained. The dc threshold current was 100-300 mA and the differential quantum efficiency per facet was 10-15 percent. Continuous CW operation for over 2000 h at 25°C has been achieved.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 7 )