By Topic

High temperature characteristics of stripe-geometry InGaAsP/InP double-heterostructure lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yano, M. ; University of Tokyo, Tokyo, Japan ; Imai, H. ; Hori, K. ; Takusagawa, Masahito

This paper presents high temperature characteristics of stripe-geometry InGaAsP/InP double-heterostructure lasers with an emission wavelength of 1.3μm. To evaluate how thermal characteristics such as heat dissipated power, thermal resistance, and temperature increase in the quaternary active region contribute to CW operation, and to derive conditions for stable operation at high temperatures, these thermal characteristics were analyzed for gain-guiding lasers and refractive index-guiding lasers as a function of stripe width and cavity length. Using proton bombarded lasers and self-aligned lasers, oscillation behavior was examined at above room temperature and compared with the analytical results.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 5 )