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Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layers

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5 Author(s)
Shimizu, H. ; Matsushita Electronics Corporation, Takatsuki, Osaka, Japan ; Itoh, K. ; Wada, M. ; Sugino, Takashi
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It is shown that drastic reduction of the active-layer stress can be obtained by the introduction of a GaAlAs buffer layer in GaAlAs visible lasers. The life tests of the GaAlAs visible lasers with the optimally designed buffer layers were carried out at 50°C in a dry nitrogen ambient. The results indicate that the introduction of the optimal buffer layer leads to a reduction in the stress induced degradation of GaAlAs visible lasers.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 5 )

Date of Publication:

May 1981

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