By Topic

The influence of interface grading on threshold current density of (near) visible DH(Ga,Al)As lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Nijman, W. ; Philips Research Labs., Eindhoven, The Netherlands ; Leswin, W. ; Thijs, P.

The effect of interface grading around the active layer in DH (Ga, Al) As near-visible lasers ( \lambda _{L} \approx 780 nm) has been investigated for Ge and Sn as p- and n-type dopants. The combination of graded transition layers with a rather high Al and Ge concentration gives rise to a high effective interface recombination velocity ( S l\sim 4000 cm/s) due to carrier loss in the highly Ge-doped p-Ga0.55Al0.45As cladding layer. The chemical width W\min{90}\max {10} of the transition layers is determined by SIMS and SAES and found to range between 50 and 2.5 nm. The latter extremely steep interfaces have been grown in a novel LPE growth system. The threshold current density and its temperature sensitivity, in terms of the exponential relationship J_{th}(T) = J_{0} \exp (T/T_{0}) improve significantly with abrupt junctions. From this material 5 μm proton-bombarded stripe lasers with a threshold current of ∼90 mA and a T_{0} = 120 K at 780 nm have been fabricated.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 5 )