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Reduction of the threshold current of GaInAsP lasers with an antimeltback layer was studied in the wavelength range n. The two-phase solution growth technique was applied using a relatively low temperature and a slow cooling rate of 0.17°C/min to reduce the active layer thickness. The antimeltback layer with a bandgap wavelength of 1.35 μm resulted in a flat active layer and eliminated the melt-back problem completely. From experiments and calculations we found that both the carrier and the optical confinement of this structure, having an antimeltback layer, were almost the same as those for the conventional InP cladding structure. A threshold eurrent density as low as 1.2 kA/cm2and an active layer thickness of 0.20μm were obtained at these wavelengths. The lattice-match condition of low-temperature growth was studied. In the low-temperature growth, the longer wavelength lasers were grown with the same amount of InAs. was independent of the growth condition ( ) and had a value of 5-6 kA/cm2. μm.