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Band-to-band Auger effect on output power saturation in InGaAsP light emitting diodes is studied theoretically. The CHSH-type Auger transition rate is calculated using an approximation formula which involves a weak degeneracy effect. Calculated carrier lifetime and radiance versus current density for 1.3 μm LED's agree with reported experimental results. Band-to-band Auger recombination of the CHSH process greatly affects the radiance saturation in InGaAsP LED's.