Crystal growth techniques for the metal chloride-hydride vapor-phase epitaxy of InGaAsP alloys are described. The growth conditions and gas flows for alloys with energy bandgap wavelengths in the range of1.0-1.7 mum are specified. Calibrations for n- and p-type doping and relationships between the photoluminescence spectral half-width and doping level are also presented. Mobility values as high as 4500 cm2/V . s (300 K) and electron diffusion lengths as long as 1.75 μm have been measured in InGaAsP alloys. The growth of alloys over "vee," "dovetail," and circularly defined regions in InP substrates is also discussed.