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InP/InGaAs heterojunction phototransistors

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4 Author(s)
Campbell, Joe C. ; Crawford Hill Lab., Bell Labs., Holmdel, NJ, USA ; Dentai, A.G. ; Burrus, C.A., Jr. ; Ferguson, J.

We describe the fabrication and device characteristics of experimental back-illuminated InP/InGaAs n-p-n heterojunction phototransistors. These devices exhibit photoresponse in the wavelength range of 0.95-1.6 \mu m. An optical gain of 40 at an input power of 1 nW (an improvement of 1000 in sensitivity over previously reported phototransistors) has been observed. Gains as high as 1000 have been achieved for higher incident power levels.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 2 )