By Topic

CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
R. Nelson ; Bell Laboratories, Murray Hill, NJ, USA ; R. Wilson ; P. Wright ; P. Barnes
more authors

The fabrication procedure, electrical properties, optical-bean characteristics, spectral characteristics, and temperature dependence of emission wavelength and threshold of InGaAsP buried-heterostructure (BH) lasers emitting at 1.3 μm are described. The dimensional requirements for fundamental-transverse mode operation have been determined. BH devices are characterized by low threshold currents, fundamental transverse mode operation, linear light output, and narrow spectral width. For 380 μm long devices threshold currents of 40 mA, slope efficiencies of 18 percent, forward resistance of 5 Ω, and T0values of 75 K have been attained.

Published in:

IEEE Journal of Quantum Electronics  (Volume:17 ,  Issue: 2 )