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CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers

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5 Author(s)
Nelson, R.J. ; Bell Laboratories, Murray Hill, NJ, USA ; Wilson, R.B. ; Wright, P.D. ; Barnes, Peter A.
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The fabrication procedure, electrical properties, optical-bean characteristics, spectral characteristics, and temperature dependence of emission wavelength and threshold of InGaAsP buried-heterostructure (BH) lasers emitting at 1.3 μm are described. The dimensional requirements for fundamental-transverse mode operation have been determined. BH devices are characterized by low threshold currents, fundamental transverse mode operation, linear light output, and narrow spectral width. For 380 μm long devices threshold currents of 40 mA, slope efficiencies of 18 percent, forward resistance of 5 Ω, and T0values of 75 K have been attained.

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Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 2 )