Cart (Loading....) | Create Account
Close category search window

Growth and characterization of 1.3 µm CW GaInAsP/InP lasers by liquid-phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ng, W.W. ; Electronic Research Center, Rockwell International, Thousand Oaks, CA, USA ; Dapkus, P.D.

The variation of the threshold current density and its temperature dependence with acceptor concentration in GaInAsP/InP lasers emitting at 1.3 μm is described. Mechanisms responsible for the dependence are identified. A model is developed to predict the effect of the above dependence on the CW operation range of these devices. The validity of the model is verified experimentally.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 2 )

Date of Publication:

Feb 1981

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.