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The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm region

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3 Author(s)
F. Capasso ; Bell Laboratories, Murray Hill, NJ, USA ; M. Panish ; S. Sumski

We report on the liquid-phase epitaxial (LPE) growth of low doped n-GaSb for long wavelength photodiodes. Very low net donor concentration epilayers ( 5 \times 10^{14}-5 \times 10^{15} /cm3) were grown both from undoped Ga rich solutions in the 300-375\deg C range and by compensation using Ga-rich solutions at \sim500\deg C with intentionally added Te. The preparation of Au-GaSb Schottky diodes for C-V profiling is also discussed.

Published in:

IEEE Journal of Quantum Electronics  (Volume:17 ,  Issue: 2 )