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High-speed photoconductive detectors using GaInAs

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3 Author(s)
Gammel, J. ; Bell Labs., Reading, PA, USA ; Ohno, Hideo ; Ballantyne, Joseph M.

Because of its low bandgap, GaInAs lattice matched to InP is a promising material for photodetection for wavelengths to approximately 1.6 μm. In this paper we will present data on high speed photodetectors fabricated using n-type GaInAs grown by molecular beam epitaxy (MBE) on semiinsulating InP substrates. The detectors show high speed response (∼200 ps FWHM) with internal gain of ∼10. From the device I-V characteristics, the electron velocity versus electric field curves in GaInAs are inferred. The high mobility and peak velocity of electrons in GaInAs show a direct relation to the performance of the experimental photoconductive detectors.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 2 )