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InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelength

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3 Author(s)
Tein-Pei Lee ; Bell Comm. Research, Red Bank, NJ, USA ; Burrus, C.A., Jr. ; Dentai, A.G.

We summarize our work on back-illuminated photodiodes based on the As-Ga-In-P III-V semiconductor system which, with InP substrates, can provide photodetectors to cover the wavelength range of0.93-1.65 mum. LPE layer growth and material purification techniques are described, as well as the fabrication and characterization of p-i-n photodiodes made from these compounds. The relevant device parameters and their optimization are discussed, and the performance of high-bit-rate optical receivers employing the new detectors is noted. Finally, we suggest some areas where further research might lead both to a better understanding of carrier transport in these heterojunction configurations and to improved devices made from them.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 2 )

Date of Publication:

Feb 1981

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