System Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

InGaAs/InP p-i-n photodiodes for lightwave communications at the 0.95-1.65 µm wavelength

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tein-Pei Lee ; Bell Comm. Research, Red Bank, NJ, USA ; Burrus, C.A., Jr. ; Dentai, A.G.

We summarize our work on back-illuminated photodiodes based on the As-Ga-In-P III-V semiconductor system which, with InP substrates, can provide photodetectors to cover the wavelength range of 0.93-1.65 \mu m. LPE layer growth and material purification techniques are described, as well as the fabrication and characterization of p-i-n photodiodes made from these compounds. The relevant device parameters and their optimization are discussed, and the performance of high-bit-rate optical receivers employing the new detectors is noted. Finally, we suggest some areas where further research might lead both to a better understanding of carrier transport in these heterojunction configurations and to improved devices made from them.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 2 )