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Heavily-doped semiconductor lasers

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1 Author(s)
J. Copeland ; Bell Labs., Holmdel, NJ, USA

A theoretical study of the effect of heavily doping the active layer of a semiconductor laser shows that the minority carrier density required to reach inversion decreases with increasing doping. Unfortunately, the minority carrier lifetime also decreases since there is a component of the recombination rate that is proportional to the doping density. It is found that for a dopant with a recombination rate coefficient K_{B}, 5E-10 cm3/s (Zn in GaAs), the inversion current density has a local minimum at zero doping, but decreases again for n-type doping above 1E18 /cm, and is one third of the zero value at 4E18 /cm. The value of KBfor other dopants and materials is unknown; however, for a dopant with a coefficient smaller than 5E-11 , the inversion current would be less than one tenth the zero value at 4E18 n-type, and would also decrease with the addition of p-type dopant. These results indicate that by heavily doping the active layer with the proper dopant, one might obtain both faster response and a lower threshold current, particularly with n-type dopants.

Published in:

IEEE Journal of Quantum Electronics  (Volume:17 ,  Issue: 11 )