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LED bandwidth improvement by bipolar pulsing

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1 Author(s)
R. Dawson ; Crawford Hill Lab., Bell Labs., Holmdel, NJ, USA

The application of reverse bias pulses at on-off transitions increased the maximum bit rate of full power operation of long wavelength InGaAsP LED's from 200 to 300 Mbits/s by reduction of the stored charge fall time. Although designed primarily for nonreturn to zero (NRZ) DS-4 experiments, the circuitry operates from 50 to 300 Mbits/s for the return to zero (RZ) or NRZ format with fixed or pseudo-random word patterns.

Published in:

IEEE Journal of Quantum Electronics  (Volume:16 ,  Issue: 7 )