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Comparison between lasers isolated by oxygen implantation and SiO2isolated stripe lasers

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4 Author(s)
Beneking, H. ; Technical University of Aachen, Aachen, Germany ; Grote, N. ; Krautle, H. ; Roth, W.

GaAs/GaAlAs DH lasers isolated by an SiO2layer on top of the p-contacting layer are compared to DH lasers in which the isolation is maintained by an isolating the O+ -implanted layer within the n+- substrate. Measurements were performed on four O+ isolated lasers and five SiO2isolated lasers with the same composition and thickness of active and upper confinement layers. Threshold currents of both groups were very similar, whereas the O+ -implanted lasers showed superior thermal resistances by a factor of 2. Thermal resistances were measured by the shift of the lasing spectra with power dissipation.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:16 ,  Issue: 5 )

Date of Publication:

May 1980

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