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Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

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6 Author(s)
Wilt, D. ; California Institute of Technology, Pasadena, CA, USA ; Bar-Chaim, N. ; Margalit, S. ; Ury, I.
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Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:16 ,  Issue: 4 )