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Ultrashort laser: Lasing in MBE GaAs layer with perpendicular-to-film optical excitation and emission

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6 Author(s)
A. Passner ; Bell Labs., Murray Hill, NJ, USA ; H. Gibbs ; A. Gossard ; S. McCall
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Lasing was observed in a 4.5 μm thick GaAs MBE-grown heterostructure (0.2 μm Al0.42Ga0.58As, 4.1 μm GaAs, 0.21 μm AlGaAs). The laser was driven by pulses from a mode-locked Ar laser (514.5 nm) with a maximum of 20 W peak power in 100 ps long pulses focused to 25 μm. The lasing occured along the pump axis within a cavity defined by the coated AlGaAs surfaces.

Published in:

IEEE Journal of Quantum Electronics  (Volume:16 ,  Issue: 12 )