By Topic

InP-In1-xGaxAsyP1-yembedded mesa stripe lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Prince, F. ; Instituto de Física, Sao Paulo, Brazil ; Patel, N. ; Bull, D.

A laser structure was fabricated using two-step liquid-phase epitaxy, employing the melt-back technique. The fabrication and properties of this structure are described in detail. Good linearity of the power output up to power levels of 20 mW was obtained. The threshold current density at 300 K is 9-12 kA/cm2. This high value is mainly due to Zn-diffusion from the third to the buffer layer during the second growth step of the fabrication process. The external differential quantum efficiency is 30-35 percent under pulsed operation at 25°C. The pulsed threshold current has an exponential behavior with temperature whereT_{0} = 60degC. The far-field beam divergences in the directions parallel and perpendicular to the junction plane are12-15degand35-40deg, respectively. Transverse mode stabilization was improved with this laser structure.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:16 ,  Issue: 10 )