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Optical gain spectra of InGaAsP/InP double heterostructures

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3 Author(s)
Goebel, E. ; Universität Stuttgart, Stuttgart, Germany ; Luz, G. ; Schlosser, E.

We report the first optical gain measurements on InGaAsP/ InP double heterostructures with composition corresponding to an emission wavelength of about 1.3 μm at 300 K. At optical pumping levels of about 1 MW/cm2the maximum gain values of the best samples available are 800 cm-1at 2 K, 500 cm-1at 77 K, and 200 cm-1at 300 K. We conclude from low-intensity luminescence and absorption spectra, that the laser transition corresponds to free-carrier recombination between band-tail states, which are present even in not intentionally doped material. Although these tail states result in rather broad low-intensity luminescence, narrow gain spectra comparable to those of GaAs/GaAlAs double heterostructures are obtained.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 8 )

Date of Publication:

Aug 1979

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