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Quantum-well AlxGa1 - xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

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4 Author(s)
R. Dupuis ; Rockwell International, Anaheim, CA, USA ; P. Dapkus ; R. Kolbas ; N. Holonyak

Data are presented on photopumped single- and multiple-quantum-well AlxGa1-xAs-GaAs heterostructures grown by metalorganic chemical vapor deposition (MO-CVD) showing that continuous room-temperature (CW 300 K) laser operation of such structures is possible in the range 0-150 meV above the GaAs active region band edge ( \Delta E \equiv \hbar \omega - E_{g} = 0-150 meV). Optically pumped multiple-quantum-well heterostructure lasers of short cavity length ( l l\sim 20 \mu m), and thus high edge-to-edge cavity end losses, are shown to operate at photo-excitation threshold levels as low as 900 W/cm2( J_{th} \sim 375 A/cm2). As the quantum-well dimension is reduced to L_{z} l\sim 100 Å, single-active-layer heterostructures shift their laser operation to higher confined-particle states, or fail to operate altogether, whereas multiple-active-layer heterostructures continue to operate as lasers on the lowest confined-particle states n = 1 e \rightarrow hh and n' = 1' e \rightarrow lh transitions). For a multiple-quantum-well heterostructure of small enough GaAs active region size, L_{z} < 80 Å, recombination radiation at the energy gap is cut off, and as expected, laser operation on the lowest confined-particle states (1 - 1') is shifted to high energy ( \hbar \omega - E_{g} > 50 meV).

Published in:

IEEE Journal of Quantum Electronics  (Volume:15 ,  Issue: 8 )