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Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasers

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1 Author(s)
Jaw Hsieh ; Massachusetts Institute of Technology, Lexington, MA, USA

Deep Zn diffusion from a ZnP2source has been used to fabricate stripe-geometry double-heterostructure GaInAsP/InP diode lasers with emission wavelengths in the1.2-1.3 mum range. These devices exhibit good electrical and optical confinement. For sufficiently narrow stripe widths (<10 mum), emission is usually single mode and linear. CW outputs up to ∼8 mW per facet have been observed. In initial life tests, two Zn-diffused lasers have operated CW at room temperature for over 5000 h without appreciable degradation.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 8 )

Date of Publication:

August 1979

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