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Fundamental transverse and longitudinal mode oscillation in terraced substrate GaAs-(GaAl)As lasers

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5 Author(s)
Sugino, Takashi ; Matsushita Electronics Corporation, Takatsuki, Osaka, Japan ; Itoh, K. ; Wada, M. ; Shimizu, H.
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A new, simple structure for a stripe-geometry laser is proposed. A double heterostructure is fabricated on a terraced substrate, providing a modified rib-waveguide structure in the active layer. A lasing mode is confined and stabilized in the narrow area between two adjacent bends of the active layer. The terraced substrate laser exhibits a stable, single longitudinal mode oscillation as well as a fundamental transverse mode oscillation in CW operation. No kinks have been observed in light-output versus current characteristics. The linearity continues up to ten times the threshold in the pulsed operation at which the power output is 150 mW per facet.

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Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 8 )