By Topic

Growth and characterization of MO/VPE double-heterojunction lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
H. Veenvliet ; Philips Research Laboratories, Eindhoven, The Netherlands ; C. van Opdorp ; R. Tijburg ; J. -P. Andre

Metalorganic vapor-phase epitaxy (MO/VPE) has been used for the growth and fabrication of double-heterojunction (DH) devices. Al0.3Ga0.7As/GaAs DH mesa stripe lasers were made, which have a threshold current density of 6.7 kA/cm2. We attribute this high value to recombination losses at killer centers situated in the confinement layers very close to the active layer; it is shown that these killers were introduced by using dopant concentrations beyond 4 \times 10^{17} cm-3. The MO/VPE technique was also applied for burying mesa lasers. The threshold current density of an LPE mesa buried with monocrystalline (Al, Ga)As was 3.5 kA/cm2; i.e., 60 percent higher than its corresponding broad-area value. It is shown that in order to reduce the excess current, the recombination velocity at the VPE/LPE active-layer interfaces should be lowered; viz., to a value below the diffusion velocity of carriers towards these interfaces. The optical mode structure of the buried mesa (BM) lasers was stable up to a power output of 10 mW/facet.

Published in:

IEEE Journal of Quantum Electronics  (Volume:15 ,  Issue: 8 )