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Oxide defined TJS lasers in InGaAsP/InP DH structures

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4 Author(s)
D. Bull ; Universidade Estadual de Campinas, Instituto de Física "Gleb Wataghin," Campinas, Brazil ; N. Patel ; F. Prince ; Y. Nannichi

Transverse junction stripe lasers in the InGaAsP-InP systems have been fabricated by Zn diffusion through oxide windows into DH structures of InGaAsP/InP with all epitaxial layers n-type. The quaternary layer composition is such that room temperature laser emission is at 1.18 μm. TJS laser mode behavior with accompanying single longitudinal mode operation and kink-free light-output characteristics are seen at 77 K. As the temperature is increased, this behavior persists up to about 130 K, when parallel electron injection through the p-n junction in the InP layers becomes so large that, in parallel with the TJS laser filament, a normally operating DH laser filament starts operating. At higher temperatures only the latter is seen to operate.

Published in:

IEEE Journal of Quantum Electronics  (Volume:15 ,  Issue: 8 )