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Transient effects in single heterostructure GaAs lasers

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3 Author(s)
J. Vilela ; Universidade Estadual de Campinas, Campinas, Sao Paulo, Brazil ; F. Nunes ; N. Patel

We apply our theory on long delays in GaAs junction lasers to describe the transient phenomena of SH GaAs lasers. This is done at the beginning of the exciting pulse and at the instant of lasing either with a long delay or with Q -switching. The abrupt reduction of spontaneous emission at the instance of lasing with a long delay is shown to occur as a consequence of a reduction in the carrier density that takes place during the transient period. It is also shown that H -pulsing can occur only in a very special case.

Published in:

IEEE Journal of Quantum Electronics  (Volume:15 ,  Issue: 8 )