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III-V alloy heterostructure high speed avalanche photodiodes

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3 Author(s)
Law, H. ; Rockwell International Science Center, Thousand Oaks, CA, USA ; Nakano, K. ; Tomasetta, L.R.

Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaSb, GaAlAsSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 \to 1.8 \mu m. Early stages of development show very encouraging results. High speed response of <35 ps and high quantum efficiency >95 percent have been obtained. The dark currents and the excess avalanche noise will also be discussed. A direct comparison of GaAlSb, GaAlAsSb, and InGaAsP avalanche photodiodes is given.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 7 )