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Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

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2 Author(s)
Dupuis, Russell D. ; Rockwell International, Anaheim, CA, USA ; Dapkus, P.Daniel

Recently Ga1-xAlxAs-GaAs double-heterostructure lasers having low threshold current densities have been grown by metalorganic chemical vapor deposition. In addition to these conventional double-heterostructure lasers, unique laser structures have been grown, e.g., channel-guide, distributed-Bragg-confinement, and single- and multiple-quantum-well lasers. We describe here the preparation and performance of these devices.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 3 )