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Photodiodes for use in the m wavelength region have been fabricated from double-heterostructure InGaAsP/InP wafers grown by liquid-phase epitaxy (LPE). The measured avalanche multiplication in mesa-configuration devices was limited to values of 10 or less. The results of careful measurement of the photoresponse, quantum efficiency, and reverse-bias characteristics suggest that the gain is limited by microplasma breakdown. The density of microplasmas was estimated to be about 106cm-2, approximately equal to the etch pit density of the InP substrates used in growth of the epitaxial layers.