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InGaAsP/InP photodiodes: Microplasma-limited avalanche multiplication at 1-1.3-µm wavelength

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3 Author(s)
Tien Lee ; Bell Telephone Laboratories, Inc., Holmdel, NJ, USA ; Burrus, C.A., Jr. ; Dentai, A.G.

Photodiodes for use in the 1-1.3-\mu m wavelength region have been fabricated from double-heterostructure InGaAsP/InP wafers grown by liquid-phase epitaxy (LPE). The measured avalanche multiplication in mesa-configuration devices was limited to values of 10 or less. The results of careful measurement of the photoresponse, quantum efficiency, and reverse-bias I-V characteristics suggest that the gain is limited by microplasma breakdown. The density of microplasmas was estimated to be about 106cm-2, approximately equal to the etch pit density of the InP substrates used in growth of the epitaxial layers.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 1 )