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High-reflectivity cavity mirrors for high-performance (GaAl) As diode lasers

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1 Author(s)
D. Kato ; Electrotechnical Laboratory, Tanashi, Tokyo, Japan

Effects of the high-reflectivity mirrors on the performance of (GaAl)As diode lasers are investigated by using a laser diode model. An optimum value for the mirror reflectivity is obtained by using a figure of merit which reflects low threshold and high slope efficiency. An optimum reflectivity value R = 0.75 is obtained for a laser with a cavity length l= 300 \mu m and an internal loss coefficient \gamma _{i} = 10 cm-1. A higher internal photon flux density relative to the output photon flux density is shown to occur with the high-reflectivity mirror. High-reflectivity mirrors are shown to reduce optical feedback effect from external devices and the lowered threshold value to reduce the thermal effects on the modulation characteristics and the degradation.

Published in:

IEEE Journal of Quantum Electronics  (Volume:14 ,  Issue: 8 )