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Single-pass gain measurements on optically pumped AlxGa(1-x)As-AlyGa(1-y)As double-heterojunction laser structures at room temperature

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2 Author(s)
J. Bakker ; Philips Research Laboratories, Eindhoven, The Netherlands ; G. Acket

Experiments are described in which the intensity and spectral distribution of amplified spontaneous radiation is measured on optically pumped AlxGa(1-x)As-AlyGa(1-y)As double-heterojunction structures as a function of the length of the region where the amplification takes place. From these data information is obtained on the gain versus wavelength dependence and gain saturation as a function of the excess carrier densities created. Furthermore, the optical absorption of a short unpumped region was also determined. Results are presented for structures with a GaAs active region ( y \approx 0 ) and for a structure with y \approx 0.10 . The results are compared with those of calculations based on various recombination models. Furthermore, a comparison is made with the values of the normalized threshold current density obtained on laser diodes fabricated from the same wafers.

Published in:

IEEE Journal of Quantum Electronics  (Volume:13 ,  Issue: 8 )