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The bent-guide structure AlGaAs-GaAs semiconductor laser

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1 Author(s)
Matsumoto, N. ; Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan

The laser oscillation of GaAs-AlGaAs DH-structure laser with a bent guide was reported. The threshold current density Jthwas about 3-15 kA/cm2, and the longitudinal mode was single up to 1.7 times Jth. From the simulation experiments, it was concluded that this mode selectivity was due to the multicavity effect.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:13 ,  Issue: 8 )