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Measurement of spontaneous-emission factor of AlGaAs double-heterostructure semiconductor lasers

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3 Author(s)
Suematsu, Y. ; Tokyo Institute of Tech., Tokyo, Japan ; Akiba, S. ; Tchanghee Hong

In this paper, experimental determination of the spontaneous-emission factor of an injection laser is presented. For a lot of conventional AlGaAs DH stripe lasers, spontaneous-emission factors of about 10-5were obtained from the measurement of the light intensity of a lasing mode versus the injected current. These values are in good agreement with the theoretical prediction based upon the classical wave theory. Brief discussion of the magnitude of the spontaneous-emission factor is given relating to the direct modulation characteristics of a semiconductor laser, which shows that the damping oscillation can be decreased in a laser consisting of very small active region.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:13 ,  Issue: 8 )

Date of Publication:

Aug 1977

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