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Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - I: Lasers with cleaved mirrors

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4 Author(s)
Itoh, K. ; Matsushita Electronics Corporation, Takatsuki, Osaka, Japan ; Asahi, K. ; Inoue, M. ; Teramoto, I.

We report a new type of embedded stripe laser in which low-order mode CW oscillation is successfully attained at room temperature. In order to achieve lateral current confinement, a high-resistivity polycrystalline GaAsP layer is formed around the mesa stripe by selective vapor-phase growth technology. It turns out that a stable single-mode operation is attained at an injected current up to several times the threshold value.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:13 ,  Issue: 8 )

Date of Publication:

August 1977

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