Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - I: Lasers with cleaved mirrors

We report a new type of embedded stripe laser in which low-order mode CW oscillation is successfully attained at room temperature. In order to achieve lateral current confinement, a high-resistivity polycrystalline GaAsP layer is formed around the mesa stripe by selective vapor-phase growth technology. It turns out that a stable single-mode operation is attained at an injected current up to several times the threshold value.