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Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - II: Lasers with etched mirrors

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7 Author(s)
Itoh, K. ; Matsushita Electronics Corporation, Takatsuki, Osaka, Japan ; Asahi, K. ; Inoue, M. ; Teramoto, I.
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Monolithic CW lasers with low threshold are reported in which mesa stripes are embedded with vapor-phase-grown high-resistivity GaAsP layers and cavity mirrors are formed by chemical etching. An etching solution consisting of NaOH, H2O2, and NH4OH has turned out to offer excellently flat-cavity mirrors on

Published in:

Quantum Electronics, IEEE Journal of  (Volume:13 ,  Issue: 8 )

Date of Publication:

August 1977

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