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Interaction of microwave biased n-GaAs and 337 µm radiation

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3 Author(s)
Epton, P. ; Rice University, Houston, TX ; Wilson, W.L., Jr. ; Tittel, F.K.

n-GaAs cooled to 4.2 K is impact ionized with X-band microwave pulses. Fast rise-time modulation of 337 μm radiation is observed. The GaAs is less absorptive in the ionized state than in the unionized state.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:13 ,  Issue: 6 )