The device structure and experimental operation of an integrated optical waveguide and charge-coupled device (CCD) detector array are considered. The use of silicon as a substrate allows direct fabrication of the CCD detector array and a thermally oxidized layer of SiO2forms an effective substrate for waveguide deposition. The detector array is composed of a two-phase overlapping-gate CCD with first-level polycrystalline silicon electrodes and second-level aluminum electrodes connected in parallel by means of a series of gates to an array of pbotodiodes. In the photodiode region the SiO2layer is tapered to a termination so that with minimal scatter, light is multiply refracted into the detector region. The center-to-center detector element spacing of the device fabricated and successfully operated is 32 μm. Optimum detector length is considered as a function of waveguide thickness. The integrated waveguide-CCD array is expected to become an integral part of various signal-processing devices.