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An integrated optical waveguide and charge-coupled-device image array

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2 Author(s)
Boyd, J.T. ; University of Cincinnati, Cincinnati, OH, USA ; Chen, C.L.

The device structure and experimental operation of an integrated optical waveguide and charge-coupled device (CCD) detector array are considered. The use of silicon as a substrate allows direct fabrication of the CCD detector array and a thermally oxidized layer of SiO2forms an effective substrate for waveguide deposition. The detector array is composed of a two-phase overlapping-gate CCD with first-level polycrystalline silicon electrodes and second-level aluminum electrodes connected in parallel by means of a series of gates to an array of pbotodiodes. In the photodiode region the SiO2layer is tapered to a termination so that with minimal scatter, light is multiply refracted into the detector region. The center-to-center detector element spacing of the device fabricated and successfully operated is 32 μm. Optimum detector length is considered as a function of waveguide thickness. The integrated waveguide-CCD array is expected to become an integral part of various signal-processing devices.

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Quantum Electronics, IEEE Journal of  (Volume:13 ,  Issue: 4 )