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Characteristics of RF injection locking of self-pulsing in an AlGaAs DH junction laser

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2 Author(s)
Lee, T.P. ; Bell Telephone Laboratories, Inc., Holmdel, NJ, USA ; Serra, T.

The minimum RF power required for injection locking of the light pulsations in the output of a CW room-temperature AlGaAs double-heterostructure (DH) junction laser was found to depend exponentially on ( f-f_{r} ), where f is the RF injection frequency and fris the self-pulsing frequency, and also, to depend inversely on the self-pulsing strength of the laser. Nearly 100-percent modulation depth is achievable at f=f_{r} , and slight reduction of modulation depth occurs when f \gg f_{r} .

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Quantum Electronics, IEEE Journal of  (Volume:12 ,  Issue: 6 )