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Threshold behavior of CW GaAs-AlGaAs injection lasers

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2 Author(s)
Butler, J.K. ; Southern Methodist University, Dallas, TX, USA ; Chung-Shu Wang

This paper investigates some of the properties of continuous wave (CW) (AlGa)As-GaAs injection lasers with Al in the active region. The active region gain at threshold g th is estimated as a function of Al concentration in the active region. The basic configuration is a five-layer structure with GaAs as the two outer regions; the center region is AlyGa1-yAs and the two surrounding layers are AlxGa1-xAs .

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Quantum Electronics, IEEE Journal of  (Volume:12 ,  Issue: 3 )