By Topic

Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Aiki, Kunio ; Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, Japan ; Nakamura, M. ; Umeda, Jun‐ichi

The lasing characteristics of separate-confinement-heterostructure (SCH-structure) distributed-feedback (DFB) diode lasers are examined theoretically and experimentally. Wave propagation in five-layer SCH waveguides is analyzed to estimate such parameters as the lasing wavelength, coupling constant, and external quantum efficiency. Spectral and modal behavior are studied in the experiment and compared with the theoretical predictions. Diodes are shown to lase in a single longitudinal mode with a definite polarization. Spectral width is about 300 MHz just above the threshold, and becomes wider with increased excitation level. An output power of 40 mW with an external quantum efficiency of 5 percent is obtained under CW operation.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:12 ,  Issue: 10 )