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Oxygen-implanted double-heterojunction GaAs/GaAlAs injection lasers

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6 Author(s)
Blum, J.M. ; IBM Thomas J. Watson Research Center, Yorktown Heights, NY ; McGroddy, J.C. ; McMullin, P. ; Shih, K.K.
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We describe a new process for stripe formation in double-heterostructure GaAs/GaAlAs injection lasers. This process, which uses oxygen-ion implantation to form the stripe through a chemical doping effect, has several advantages over alternative methods, both with respect to device processing and device properties and has produced high yields of CW room-temperature lasers. We present the details of the device structure and fabrication processes. The results of annealing studies, optical measurements, and lifetesting are described.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:11 ,  Issue: 7 )

Date of Publication:

Jul 1975

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