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GaAs GaAlAs double-heterostructure injection lasers with distributed feedback

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6 Author(s)
Nakamura, M. ; Hitachi Ltd., Tokyo, Japan ; Aiki, K. ; Umeda, J. ; Katzir, A.
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GaAs-GaAlAs double-heterostructure distributed-feedback injection lasers are investigated at temperatures between 80 and 150 K under pulsed operation. The optical feedback for laser oscillation is provided by a corrugated interface between the p-GaAs active layer and the p-GaAlAs layer. The corrugation is made by two methods, ion milling and chemical etching, and the latter method is found to give the lower threshold. The laser oscillation occurs in a single longitudinal mode, whose wavelength is stable against the change of the excitation level. The temperature dependence of the wavelength of the distributed-feedback laser is shown to be 0.5 Å/°, which is aboutfrac{1}{3}tofrac{1}{4}that of the conventional Fabry-Perot (FP) laser.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:11 ,  Issue: 7 )

Date of Publication:

Jul 1975

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