Cart (Loading....) | Create Account
Close category search window

Monolithic Ga1-xInxAs diode lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Doerbeck, F.H. ; Texas Instruments, Inc., Dallas, TX, USA ; Lawley, K.L. ; Blum, F.A. ; Campbell, J.C.

Monolithic homojunction diode lasers have been fabricated from vapor-grown Ga1-xInxAs (0 leq x geq 0.06) mesa structures with grown optical facets. The Ga1-xInxAs lasers have been operated at 77 K, and similar GaAs mesa devices have lased between 77 K and 300 K. Monolithic arrays of up to six mesa lasers on a single substrate have been operated with all lasers oscillating simultaneously.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:11 ,  Issue: 7 )

Date of Publication:

July 1975

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.