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Monolithic Ga1-xInxAs diode lasers

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4 Author(s)
Doerbeck, F.H. ; Texas Instruments, Inc., Dallas, TX, USA ; Lawley, K.L. ; Blum, F.A. ; Campbell, J.C.

Monolithic homojunction diode lasers have been fabricated from vapor-grown Ga1-xInxAs (0 leq x geq 0.06) mesa structures with grown optical facets. The Ga1-xInxAs lasers have been operated at 77 K, and similar GaAs mesa devices have lased between 77 K and 300 K. Monolithic arrays of up to six mesa lasers on a single substrate have been operated with all lasers oscillating simultaneously.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:11 ,  Issue: 7 )

Date of Publication:

July 1975

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