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Liquid phase epitaxial In1-xGaxP1-zAsz/GaAs1-yPyheterojunction lasers

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6 Author(s)
Coleman, J.J. ; Dept. of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Ill. ; Holonyak, N. ; Lubowise, M. ; Wright, P.D.
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The growth and laser properties of In1-xGaxP1-zAsz/ GaAs1-yPysingle heterojunction laser diodes are described. High-quality p-type In1-xGaxP1-zAszlayers are grown by liquid phase epitaxy (LPE) on n-type VPE GaAs1-yPysubstrates of composition y = 0.32 - 0.40 . Laser operation (77 K) of these quaternary-ternary heterojunctions is demonstrated at shorter wavelengths (<6300 Å) and lower thresholds ( J_{th} l\sim 6.2 \times 10^{4} A/cm2) than comparable GaAs1-yPyhomojunctions. The increase observed in threshold current ( 5x ) between y = 0.38 and y = 0.40 GaAs1-yPysubstrates is attributed to the usual effect of EXapproaching E_{\Gamma } near the direct-indirect transition. From the well-defined cavity mode structure observed on these hetero-junctions, data are obtained at relatively high energy on the index dispersion quantity {n - \lambda (dn/d\lambda )} , which increases monotonically with photon energy and provides a reference for the distinctly different behavior observed on N-doped GaAs1-yPy (h_{\nu} \sim E_{\Gamma } \sim E_{N}) .

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Quantum Electronics, IEEE Journal of  (Volume:11 ,  Issue: 7 )