Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

The gain profile and time-delay effects in external-cavity-controlled GaAs lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Rossi, J. ; Massachusetts Institute of Technology, Lexington, MA, USA ; Hsieh, J.J. ; Heckscher, H.

An external dispersive cavity is used to map out the gain profile of single-heterostructure (SH), double-heterostructure (DH), and large-optical-cavity (LOC) lasers. The variations in gain profile with dopant and device operating conditions are reported. With certain cavity arrangements, long time delays in DH devices are observed; this shows that saturable absorption can be present in these as well as in all other types of GaAs diodes. A model combining saturable absorption with a breakdown in optical guiding makes it possible to consistently interpret all reported time-delay data for GaAs diffused-junction (DJ) and SH diode lasers, including Q -switching and abnormal-delay effects. Finally, experiments where two gratings are used to oscillate a diode simultaneously at two different, independently variable frequencies are described.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:11 ,  Issue: 7 )