A comprehensive model for Q switching in semiconductor lasers

By combining a carrier concentration-dependent loss term with our earlier time-dependent saturable absorption loss term we have produced a comprehensive theory for
Q
switching which successfully accounts for the results so far reported. The concentration-dependent loss term shows a superlinear dependence with current due to the decrease of real guiding at the p-n junction. This increase in loss, however, reaches a maximum and shows a slight decrease at higher concentrations due to the onset of weak imaginary guiding.