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A comprehensive model for Q switching in semiconductor lasers

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3 Author(s)
B. Thomas ; University of Wales Institute of Science and Technology, Cardiff, Wales, United Kingdom ; M. Adams ; S. Grundorfer

By combining a carrier concentration-dependent loss term with our earlier time-dependent saturable absorption loss term we have produced a comprehensive theory for Q switching which successfully accounts for the results so far reported. The concentration-dependent loss term shows a superlinear dependence with current due to the decrease of real guiding at the p-n junction. This increase in loss, however, reaches a maximum and shows a slight decrease at higher concentrations due to the onset of weak imaginary guiding.

Published in:

IEEE Journal of Quantum Electronics  (Volume:11 ,  Issue: 7 )