Cart (Loading....) | Create Account
Close category search window
 

Theory of optical gain and threshold properties of semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Aleksanian, A. ; Armenian Academy of Sciences, Ashtarak, USSR ; Poluektov, I.A. ; Popov, Yu.M.

The theory of optical gain in highly doped semiconductors employed for semiconductor lasers is developed based on the Green function approach. With the help of the analytical expression obtained for optical gain, the threshold properties of semiconductor lasers and their dependence on concentration of doping impurities and on temperature are studied. Results of numerical calculations of threshold characteristics for the most interesting cases are presented.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:10 ,  Issue: 3 )

Date of Publication:

Mar 1974

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.